Demonstration of high-speed staggered lineup GaAsSb-InP unitraveling carrier photodiodes

IEEE Photonics Technology Letters

Volumn 17, Issue 3, 2005, Pages 651-653

  Zheng, Liguang ^a   Zhang, Xiong ^a   Zeng, Yuping ^a   Tatavarti, S R ^a   Watkins, S P ^a   Bolognesi, C R ^a   Demiguel, Stéphane ^b   Campbell, J C ^b  

^a SIMON FRASER UNIVERSITY   (Canada)

^b The University of Texas at Austin   (United States)

Author keywords

GaAsSb; InP; Unitraveling carrier photodiode (UTC PD); Unitraveling photodiode

Indexed keywords

BANDWIDTH; ELECTRONS; EPITAXIAL GROWTH; OPTICAL FIBER FABRICATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

UNITRAVELING CARRIER PHOTODIODE (UTC-PD); UNITRAVELING PHOTODIODE;

PHOTODIODES;

EID: 14844365873     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.842343     Document Type: Article

References (20)

1. T. Ishibashi, S. Kodama, N. Shimizu, and T. Furuta, "High-speed response of uni-traveling-carrier photodiodes," Jpn. J. Appl. Phys. 1, Regul. Pap. Short Notes, vol. 36, pp. 6263-6268, 1997.
2. T. Ishibashi, T. Furuta, H. Fushimi, S. Kodama, H. Ito, T. Nagatsuma, N. Shimizu, and Y. Miyamoto, "InP/InGaAs uni-traveling-carrier photodiodes," IEICE Trans. Electron., vol. E83C, pp. 938-949, 2000.
3. K. Kato, S. Hata, K. Kawano, and A. Kozen, "Design of ultrawideband, high-sensitivity p-i-n photodetectors," IEICE Trans. Electron., vol. E76-C, pp. 214-221, 1993.
4. K. Kato, "Ultrawide-band/high-frequency photodetectors," IEEE Trans. Microw. Theory Tech., vol. 47, no. 7, pp. 1265-1281, Jul. 1999.
5. Y. Hirota, T. Ishibashi, and H. Ito, "1.55-μm wavelength periodic traveling-wave photodetector fabricated using unitraveling-carrier photodiode structures," J. Lightw. Technol., vol. 19, no. 11, pp. 1751-1758, Nov. 2001.
6. Y. Hirota, T. Hirono, T. Ishibashi, and H. Ito, "Traveling-wave photodetector for 1.55 μm wavelength fabricated with unitraveling-carrier photodiodes," Appl, Phys. Lett., vol. 78, pp. 3767-3769, 2001.
7. Y. Miyamoto, M. Yoneyama, K. Hagimoto, T. Ishibashi, and N. Shimizu, "40 Gbit/s high sensitivity optical receiver with uni-travelling-carrier photodiode acting as decision IC driver," Electron. Lett., vol. 34, pp. 214-215, 1998.
8. Y. Muramoto, K. Yoshino, S. Kodama, Y. Hirota, H. Ito, and T. Ishibashi, "100 and 160 Gbit/s operation of uni-travelling-carrier photodiode module," Electron. Lett., vol. 40, pp. 378-380, 2004.
9. N. Shimizu, N. Watanabe, T. Furuta, and T. Ishibashi, "Improved response of uni-traveling-carrier photodiodes by carrier injection," Jpn. J. Appl. Phys. 1, Regul. Pap. Short Notes, vol. 37, pp. 1424-1426, 1998.
10. H. Ito, T. Furuta, S. Kodama, and T. Ishibashi, "InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth," Electron. Lett., vol. 36, pp, 1809-1810, 2000.
11. M. Feng, N. Holonyak, B. Chu-Kung, G. Walter, and R. Chan, "Type-II GaAsSb/InP heterojunction bipolar light-emitting transistor," Appl. Phys. Lett., vol. 84, pp. 4792-4794, 2004.
12. K.G. Merkel, V. M. Bright, M. A. Marciniak, C. L. A. Cerny, and M. O. Manasreh, "Temperature dependence of the direct band gap energy and donor-acceptor transition energies in Be-doped GaAsSb lattice matched to InP," Appl. Phys. Lett., vol. 65, pp. 2442-2444, 1994.
13. J. Hu, X. G. Xu, J. A. H. Stotz, S. P. Watkins, A. E. Curzon, M. L. W. Thewalt, N. Matine, and C. R. Bolognesi, "Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy," Appl. Phys. Lett., vol. 73, pp. 2799-2801, 1998.
14. y on InP grown by metalorganic chemical vapor deposition," Appl. Phys. Lett., vol. 74, pp. 410-412, 1999.
15. CEO >= 6 V," IEEE Electron Device Lett., vol. 22, no. 8, pp. 361-363, Aug. 2001.
16. C. R. Bolognesi, M. W. Dvorak, N. Matine, O. J. Pitts, and S. P. Watkins, "Ultrahigh performance staggered lineup ("Type-II") InP/ GaAsSb/InP NpN double heterojunction bipolar transistors," Jpn. J. Appl. Phys. 1, Regul. Pap. Short Notes, vol. 41, PPi 1131-1135, 2002.
17. C. R. Bolognesi, M. W. Dvorak, and S. P. Watkins, "Type-II base-collector performance advantages and limitations in high-speed NpN double heterojunction bipolar transistors (DHBTs)," IEICE Trans. Electron., vol. E86C, pp. 1929-1934, 2003.
18. H. G. Liu, N. Tao, S. P. Watkins, and C. R. Bolognesi, "Extraction of the average collector velocity in high-speed NpN InP/GaAsSb/InP DHBTs," in Proc. 2004 Int. Conf. Indium Phosphide and Related Materials, Kagoshima, Japan, 2004, pp. 556-557.
19. S. P. Watkins, O. J. Pitts, C. Dale, X. G. Xu, M. W. Dvorak, N. Matine, and C. R. Bolognesi, "Heavily carbon-doped GaAsSb grown on InP for HBT applications," J. Cryst. Growth, vol. 221, pp. 59-65, 2000.
20. B. T. McDermott, E. R. Gertner, S. Pittman, C. W. Seabury, and M. F. Chang, "Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors," Appl. Phys. Lett., vol. 68, pp. 1386-1388, 1996.