Type-II GaAsSb/InP heterojunction bipolar light-emitting transistor

Applied Physics Letters

Volumn 84, Issue 23, 2004, Pages 4792-4794

  Feng, M ^a   Holonyak Jr , N ^a   Chu Kung, B ^a   Walter, G ^a   Chan, R ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

JUNCTION TRANSISTOR THEORY; LIGHT-EMITTING TRANSISTORS; RADIATIVE RECOMBINATION; SIGNAL MODULATION;

BANDWIDTH; ELECTRIC BREAKDOWN; FREQUENCIES; GAIN CONTROL; GERMANIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SIGNAL PROCESSING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 3042680669     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1760595     Document Type: Article

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