Extraction of the average collector velocity in high-speed NpN InP/GaAsSb/InP DHBTs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2004, Pages 556-557

  Liu, H G ^a   Tao, N ^a   Watkins, S P ^a   Bolognesi, C R ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRONS; ERRORS; ETCHING; EVAPORATION; HETEROJUNCTION BIPOLAR TRANSISTORS; NATURAL FREQUENCIES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; X RAY DIFFRACTION ANALYSIS;

BALLISTIC ENERGY; CONDUCTION BANDS; DOUBLE HETEROSTRUCTURE BIPOLAR TRANSISTORS (DHBT); ELECTRON VELOCITY;

VELOCITY MEASUREMENT;

EID: 14844360859     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. CEO > 6 V', IEEE Electron Dev. Lett., 2001, 22, pp. 361-363
2. C.R. Bolognesi, et al.: Type-Il base-collector performance advantages and limitations in high-speed NpN double heterojunction bipolar transistors (DHBTs)', IEICE Trans. Electron., 2003, E86-C, pp. 1929-1934
3. S.E. Laux, et al.: 'Collector signal delay in the presence of velocity ovreshoot', IEEE Electron Dev. Lett., 1990, 11, pp. 174-176
4. T. Ishibashi: Influence of electron velocity overshoot on collector transit times of HBT's', IEEE Trans. Electron Devices, 1990, 37, pp. 2103-2105
5. y on InP grown by metalorganic chemical vapor deposition', Appl. Phys. Lett., 1999, 74, pp. 410-412
6. M. Kahn, et al.: 'Measurement of base and collector transit times in thin-base InGaAs/InP HBT', IEEE Electron Dev. Lett., 2003, 24, pp. 430-432