Type-II Base-Collector Performance Advantages and Limitations in High-Speed NpN Double Heterojunction Bipolar Transistors (DHBTs)

IEICE Transactions on Electronics

Volumn E86-C, Issue 10, 2003, Pages 1929-1934

  Bolognesi, C R ^a   Dvorak, Martin W ^b   Watkins, Simon P ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

^b AGILENT TECHNOLOGIES   (United States)

Author keywords

Heterostructure bipolar transistors; High speed digital circuits; Staggered band alignment; Type II lineup

Indexed keywords

CURRENT DENSITY; DIGITAL CIRCUITS; ELECTROSTATICS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE;

COLLECTOR CURRENT BLOCKING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0242412463     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (6)

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