Heavily carbon-doped GaAsSb grown on InP for HBT applications

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 59-65

  Watkins, S P ^a   Pitts, O J ^a   Dale, C ^a   Xu, X G ^a   Dvorak, M W ^a   Matine, N ^a   Bolognesi, C R ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CARRIER MOBILITY; HALL EFFECT; HOLE TRAPS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES;

CARBON DOPING; EPILAYERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034503931     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00649-7     Document Type: Article

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