메뉴 건너뛰기




Volumn 579, Issue 1, 2005, Pages 11-20

Theoretical study of the electronic structure of the Si3N 4(0 0 0 1) surface

Author keywords

Ab initio quantum chemical methods and calculations; Photoelectron emission; Silicon nitride; Surface relaxation and reconstruction

Indexed keywords

ALGORITHMS; ELECTRON EMISSION; ELECTRONIC STRUCTURE; FERMI LEVEL; HYDROGENATION; LATTICE CONSTANTS; PHOTOEMISSION; PROBABILITY DENSITY FUNCTION; RELAXATION PROCESSES;

EID: 14744279217     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2005.01.025     Document Type: Article
Times cited : (38)

References (46)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.