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Volumn 579, Issue 1, 2005, Pages 11-20
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Theoretical study of the electronic structure of the Si3N 4(0 0 0 1) surface
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Author keywords
Ab initio quantum chemical methods and calculations; Photoelectron emission; Silicon nitride; Surface relaxation and reconstruction
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Indexed keywords
ALGORITHMS;
ELECTRON EMISSION;
ELECTRONIC STRUCTURE;
FERMI LEVEL;
HYDROGENATION;
LATTICE CONSTANTS;
PHOTOEMISSION;
PROBABILITY DENSITY FUNCTION;
RELAXATION PROCESSES;
AB INITIO QUANTUM CHEMICAL METHODS AND CALCULATIONS;
DENSITY FUNCTIONAL THEORY;
PHOTOELECTRON EMISSION;
SURFACE RELAXATION AND RECONSTRUCTION;
SILICON NITRIDE;
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EID: 14744279217
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/j.susc.2005.01.025 Document Type: Article |
Times cited : (38)
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References (46)
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