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Volumn 486, Issue 3, 2001, Pages 213-225

Silicon nitride chemical vapor deposition from dichlorosilane and ammonia: Theoretical study of surface structures and reaction mechanism

(6) Bagatur'Yants, Alexander A a Novoselov, Konstantin P b Safonov, Andrei A a,b Vernon Cole, J c Stoker, Matthew c Korkin, Anatoli A c

a PHOTOCHEMISTRY CENTER (Russian Federation)

b SOFT TEC (Russian Federation)

c MOTOROLA INC (United States)

Author keywords

Ab initio quantum chemical methods and calculations; Chemical vapor deposition modeling; Clusters; Models of surface chemical reactions; Models of surface kinetics; Silicon nitride; Surface chemical reaction

Indexed keywords

ACTIVATION ENERGY; AMMONIA; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; CHEMISORPTION; CRYSTAL ORIENTATION; FILM GROWTH; MATHEMATICAL MODELS; QUANTUM THEORY; SILANES; SILICON NITRIDE; SURFACE STRUCTURE;

SURFACE KINETICS;

SURFACE CHEMISTRY;

EID: 0035838296 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(01)01050-0 Document Type: Article

Times cited : (36)

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