Determination of the electrical properties of ultrathin silicon-based dielectric films: Thermally grown SiNx

Solid-State Electronics

Volumn 45, Issue 8, 2001, Pages 1265-1270

  Pic, N ^a   Glachant, A ^a   Nitsche, S ^a   Hoarau, J Y ^a   Goguenheim, D ^b   Vuillaume, D ^c   Sibai, A ^d   Chaneliere, C ^d  

^a CAMPUS DE LUMINY   (France)

^b Maison des Technologies   (France)

^c INSTITUT D ELECTRONIQUE   (France)

^d INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

Electrical properties; Metal insulator semiconductor structures; Organic monolayer; Ultrathin nitride films

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MONOLAYERS; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM; ULTRATHIN FILMS;

METAL INSULATOR SEMICONDUCTOR STRUCTURES;

DIELECTRIC FILMS;

EID: 0035416502     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00174-5     Document Type: Article

References (14)

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