Structures of nitrided Si(001) surfaces: First-principles theoretical study

Applied Physics Letters

Volumn 82, Issue 23, 2003, Pages 4044-4046

  Higai, Shin'ichi ^a   Ohno, Takahisa ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CHEMICAL BONDS; DESORPTION; DIFFUSION; DIMERIZATION; NITROGEN; PHASE DIAGRAMS; SURFACE STRUCTURE; TEMPERATURE; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

NITRIDATION;

SILICON;

EID: 0037491454     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1580639     Document Type: Article

References (13)

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10. We also examined the structures with N trimers and tetramers, but found no stable 2×2 ordered structure.
11. The electronic state of this structure is semiconductive, and the energy gap is 1.32eV.
12. 4 is not allowed for the surface Si atoms in our calculations. Thus, we discuss the stability under nonequilibrium conditions using this phase diagram.
13. Y. Morita (unpublished).