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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 11 A, 2003, Pages

Conductive-Mode Atomic Force Microscopy Study of Amorphous Silicon Nitride Thin Films

(4) Aya, Yoichiro a Ando, Atsushi b Yamasaki, Satoshi b Wakisaka, Kenichiro a

a SANYO ELECTRIC CO LTD (Japan)

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

Conductive mode atomic force microscopy; Dangling bonds; Pool Frenkel equation; Silicon nitride; Trapping center

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL BONDS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE;

ELECTRON HOPPING; TOPOGRAPHY; TRAPPING CENTER;

AMORPHOUS FILMS;

EID: 0346907121 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.l1321 Document Type: Article

Times cited : (5)

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