Improvement of junction leakage by using a Zr cap layer on a 30 nm ultrashallow Nickel-Suicide junction

Journal of the Electrochemical Society

Volumn 152, Issue 2, 2005, Pages

  Lee, Tsung Lin ^a   Lee, Ming Zhen ^a   Lei, Tan Fu ^a   Lee, Chung Len ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; METALLIZING; NICKEL COMPOUNDS; PHASE TRANSITIONS; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; THERMODYNAMIC STABILITY;

JUNCTION LEAKAGE; SERIES RESISTANCES; SILICIDATION PROCESS; ULTRASHALLOW JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 14744273962     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1851052     Document Type: Article

References (24)

1. B. Yu, Y. Wang, H. Wang, Q. Xiang, C. Riccobene, S. Talwar, and M. R. Lin, Tech. Dig. - Int. Electron Devices Meet., 1999, 509.
2. D. Lenoble, A. Grouillet, F. Arnaud, M. Haond, S. B. Felch, Z. Fang, S. Walther, and R. B. Liebert, in Proceedings of Im Implantation Technology Conference 2000, 468 (2000).
3. G. Verma, C. Gelatos, S. Talwar, and J. C. Bravman, IEEE Trans. Electron Devices, 49, 42 (2002).
4. J. F. DiGregorio and R. N. Wall, IEEE Trans. Electron Devices, 47, 313 (2000).
5. K. B. Thei, W. C. Liu, H. M. Chuang, K. W. Lin, C. C. Cheng, C. H. Ho, C. W. Su, S. G. Wuu, and C. S. Wang, IEEE Trans. Electron Devices, 48, 1740 (2001).
6. P. Liu, T. C. Hsiao, and C. S. Woo, IEEE Trans. Electron Devices, 45, 1280 (1998).
7. C. Y. Lu, J. J. Sung, R. Liu, N. S. Tsai, R. Singh, J. Hillenius, and C. Kirsch, IEEE Trans. Electron Devices, 38, 246 (1991).
8. G. G. Bentini, R. Nipoti, A. Armigliato, M. Berti, A. V. Drigo, and C. Cohen, J. Appl. Phys., 57, 270 (1985).
9. A. Lauwers, P. Besser, T. Gutt, A. Satta, M. de Potter, R. Lindsay, N. Rodlandts, F. Loosen, S. Jin, H. Bender, M. Stucchi, C. Vrancken, B. Deweerdt, and K. Maex, Microelectron. Eng., 50, 103 (2000).
10. W. L. Tan, K. L. Pey, Simon Y. M. Chooi, J. H. Ye, and T. Osipowicz, J. Appl. Phys., 91, 2901 (2002).
11. B. S. Chen and M. C. Chen, IEEE Trans. Electron Devices, 43, 258 (1996).
12. K. Goto, J. Watanabe, T. Sukegawa, A. Fushida, T. Sakuma, and T. Sugii, in Proceedings of IEEE Annual International Reliability Physics Symposium, p. 363 (1998).
13. T. Morimoto, H. S. Mornose, T. Iinuma, I. Kunishima, K. Suguro, H. Okano, I. Katakabe, H. Nakajima, M. Tsuchiaki, M. Ono, Y. Katsumata, and H. Iwai, Tech. Dig. - Int. Electron Devices Meet., 1991, 653.
14. L. W. Cheng, S. L. Cheng, L. J. Chen, H. C. Chien, H. L. Lee, and F. M. Part, J. Vac. Sci. Technol. A. 18, 1176 (2000).
15. J. S. Maa, Y. Ono, D. J. Tweet, F. Zhang, and S. T. Hsu, J. Vac. Sci. Technol. A, 19, 1591 (2001).
16. R. Pantel, D. Levy, D. Nicolas, and J. P. Ponpon, J. Appl. Phys., 62, 4319 (1987).
17. Y. Murakami, Y. Satoh, H. Furuya, and T. Shingyouji, J. Appl. Phys., 84, 3175 (1998).
18. C. J. Choi, Y. W. Ok, S. S. Hullavarad, T. Y. Seong, K. M. Lee, J. H. Lee, and Y. J. Park, J. Electrochem. Soc., 149, G517 (2002).
19. J. G. Yun, S. Y. Oh, H. H. Ji, B. F. Huang, Y. H. Park, J. S. Wang, and H. D. Lee, in Proceedings of 4th International Workshop Junction Technology, 131 (2004).
20. T. H. Hou, T. F. Lei, and T. S. Chao, IEEE Electron Device Lett., 20, 572 (1999).
21. T. L. Lee, J. W. Lee, M. C. Lee, T. F. Lei, and C. L. Lee. Electrochem. Solid-State Lett., 6, 66 (2003).
22. C. J. Choi, T. Y. Seong, K. M. Lee, J. H. Lee, Y. J. Park, and H. D. Lee, IEEE Electron Device Lett., 23, 188 (2002).
23. P. S. Lee, K. L. Pey, D. Mangelinek, J. Ding, D. Z. Chi, and L. Chan, IEEE Electron Device Lett., 22, 568 (2001).
24. Q. Xiang, C. Woo, E. Paton, J. Foster, B. Yu, and M. R. Lin, in Proceedings of Symposium on VLSI Technology, p. 76 (2002).