Novel NiSi technology utilizing Ti/Ni/TiN structure and fluorine implantation for thermal stability improvement by suppression of abnormal oxidation

Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004

Volumn 4, Issue , 2004, Pages 131-134

  Yun, Jang Gn ^a   Oh, Soon Young ^a   Ji, Hee Hwan ^a   Huang, Bin Feng ^a   Park, Young Ho ^a   Wang, Jin Suk ^a   Lee, Hi Deok ^a  

^a Chungnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ION IMPLANTATION; MAGNETRON SPUTTERING; OXIDATION; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; THERMODYNAMIC STABILITY; ULSI CIRCUITS;

ABNORMAL OXIDATION; DRAIN DOPANTS; FURNACE ANNEALING; ULTRA-SHALLOW JUNCTIONS;

NICKEL ALLOYS;

EID: 3543140738     PISSN: None     EISSN: None     Source Type: Book    
DOI: None     Document Type: Conference Paper

References (5)

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