Formation of titanium silicide on narrow gates using laser thermal processing

IEEE Transactions on Electron Devices

Volumn 49, Issue 1, 2002, Pages 42-47

  Verma, G ^a   Gelatos, C ^b   Talwar, S ^b   Bravman, J C ^a  

^a Stanford University   (United States)

^b Verdant Technologies   (United States)

Author keywords

CMOS integrated circuits; Integrated circuit metallization; Laser materials processing; Low resistivity phase; Nucleation sites; Pulsed excimer laser; Titanium compounds

Indexed keywords

AMORPHIZATION; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; EXCIMER LASERS; MOSFET DEVICES; NUCLEATION; PULSED LASER APPLICATIONS; SEMICONDUCTOR DEVICE MANUFACTURE; THERMODYNAMIC STABILITY; TITANIUM COMPOUNDS; TWO DIMENSIONAL;

LASER THERMAL PROCESSING; LOW RESISTIVITY PHASE; PULSED EXCIMER LASER; TITANIUM SILICIDE; TWO-DIMENSIONAL THERMAL SIMULATION;

GATES (TRANSISTOR);

EID: 0036256815     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974747     Document Type: Article

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