Formation of Ni silicides on (001)Si with a thin interposing Pt layer

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 4 I, 2000, Pages 1176-1179

  Cheng, L W ^a   Cheng, S L ^a   Chen, L J ^a   Chien, H C ^b   Lee, H L ^b   Pan, F M ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE; PLATINUM; SILICON COMPOUNDS; SILICON WAFERS; THERMODYNAMIC PROPERTIES; THIN FILMS;

NICKEL SILICIDES;

NICKEL COMPOUNDS;

EID: 0034225592     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582321     Document Type: Article

References (9)

1. S. P. Murarka, J. Vac. Sci. Technol. B 4, 1325 (1986).
2. Jerome B. Lasky, J. S. Nakos, O. J. Cain, and P. J. Geiss, IEEE Trans. Electron Devices 38, 262 (1991).
3. K. Maex, Mater. Sci. Eng., R. 11, 53 (1993).
4. R. Mukai, S. Ozawa, and H. Yaki, Thin Solid Films 270, 567 (1995).
5. T. Morimoto et al., IEEE Trans. Electron Devices 42, 915 (1995).
6. J. Y. Yew, L. J. Chen, and K. Nakamura, Appl. Phys. Lett. 69, 999 (1996).
7. L. W. Cheng, S. L. Cheng, J. Y. Chen, and L. J. Chen, Thin Solid Films 355/356, 412 (1999).
8. Standard JCPDS diffraction pattern - 7-251 and 38-844, JCPDS-International Center for Diffraction Data, PDF-2 Database, 12 Campus Blvd., Newton Square, PA 19073-3273.
9. M. Aly, El-Saied, and J. P. Stark, J. Appl. Phys. 53, 3063 (1982).