Abnormal junction profile of silicided p+/n shallow junctions: A leakage mechanism

IEEE Electron Device Letters

Volumn 23, Issue 4, 2002, Pages 188-190

  Choi, Chel Jong ^b   Seong, Tae Yeon ^b   Lee, Key Min ^c   Lee, Joo Hyoung ^c   Park, Young Jin ^c   Lee, Hi Deok ^a,d  

^a IEEE

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c Hynix Semiconductor Inc   (South Korea)

^d Chungnam National University   (South Korea)

Author keywords

Co salicidation; Junction; Leakage current; Selective chemical etching; Shallow trench isolation (STI); Transient enhanced diffusion (TED); Transmission electron microscopy (TEM)

Indexed keywords

COBALT COMPOUNDS; COMPUTER SIMULATION; DIFFUSION; ETCHING; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSMISSION ELECTRON MICROSCOPY;

LEAKAGE MECHANISM; SELECTIVE CHEMICAL ETCHING; SHALLOW JUNCTIONS; SHALLOW TRENCH ISOLATION; SILICIDATION; TRANSIENT ENHANCED DIFFUSION;

SEMICONDUCTOR JUNCTIONS;

EID: 0036541716     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.992834     Document Type: Article

References (11)

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8. TSUPREM-4, Version 98.4
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11. Transmission electron microscopy study of two-dimensional dopant profiling in metal-oxide-semiconductor field effect transistor test structures and devices