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Journal of Applied Physics

Volumn 84, Issue 6, 1998, Pages 3175-3186

Effects of oxygen-related defects on the leakage current of silicon p/n junctions

(4) Murakami, Yoshio a Satoh, Yuhki a,b Furuya, Hisashi a,c Shingyouji, Takayuki a,c

a MITSUBISHI MATERIALS CORPORATION (Japan)

b KYOTO UNIVERSITY (Japan)

c SUMCO CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042503325 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.368470 Document Type: Article

Times cited : (19)

References (55)

1
- 0028467507
- S. S. Kim and W. Wijaranakula, J. Electrochem. Soc. 141, 1872 (1994).
- (1994) J. Electrochem. Soc. , vol.141 , pp. 1872
- Kim, S.S.¹ Wijaranakula, W.²

2
- 11644286801
- M. Horikawa, T. Mizutani, T. Suzuki, and K. Arai, Proc. Electrochem. Soc. 94-10, 987 (1994).
- (1994) Proc. Electrochem. Soc. , vol.94 , Issue.10 , pp. 987
- Horikawa, M.¹ Mizutani, T.² Suzuki, T.³ Arai, K.⁴

3
- 0015615376
- K. V. Ravi, C. J. Varker, and C. E. Volk, J. Electrochem. Soc. 120, 533 (1973).
- (1973) J. Electrochem. Soc. , vol.120 , pp. 533
- Ravi, K.V.¹ Varker, C.J.² Volk, C.E.³

4
- 0015974387
- C. J. Valker and K. V. Ravi, J. Appl. Phys. 45, 272 (1974).
- (1974) J. Appl. Phys. , vol.45 , pp. 272
- Valker, C.J.¹ Ravi, K.V.²

5
- 84975395215
- G. A. Rozgonyi and R. A. Kushner, J. Electrochem. Soc. 123, 570 (1976).
- (1976) J. Electrochem. Soc. , vol.123 , pp. 570
- Rozgonyi, G.A.¹ Kushner, R.A.²

6
- 11644324166
- K. Tanikawa, Y. Ito, and H. Sei, Appl. Phys. Lett. 28, 285 (1976).
- (1976) Appl. Phys. Lett. , vol.28 , pp. 285
- Tanikawa, K.¹ Ito, Y.² Sei, H.³

7
- 11644281192
- R. Ogden and J. M. Wilkinson, J. Appl. Phys. 48, 417 (1977).
- (1977) J. Appl. Phys. , vol.48 , pp. 417
- Ogden, R.¹ Wilkinson, J.M.²

8
- 11644289498
- Y. Matsuoka, K. Ikuta, and S. Nakajima, Jpn. J. Appl. Phys. 17, 2167 (1978).
- (1978) Jpn. J. Appl. Phys. , vol.17 , pp. 2167
- Matsuoka, Y.¹ Ikuta, K.² Nakajima, S.³

9
- 0018998270
- S. P. Murarka, T. E. Seidel, J. V. Dalton, J. M. Dishman, and M. H. Read, J. Electrochem. Soc. 127, 716 (1980).
- (1980) J. Electrochem. Soc. , vol.127 , pp. 716
- Murarka, S.P.¹ Seidel, T.E.² Dalton, J.V.³ Dishman, J.M.⁴ Read, M.H.⁵

10
- 0003612204
- Wiley, New York
- K. V. Ravi, Imperfections and impurities in semiconductor silicon (Wiley, New York, 1981).
- (1981) Imperfections and Impurities in Semiconductor Silicon
- Ravi, K.V.¹

11
- 0004444730
- L. C. Kimerling, H. J. Leamy, and J. R. Patel, Appl. Phys. Lett. 30, 217 (1977).
- (1977) Appl. Phys. Lett. , vol.30 , pp. 217
- Kimerling, L.C.¹ Leamy, H.J.² Patel, J.R.³

12
- 0005038173
- M. Miyagi, K. Wada, J. Osaka, and N. Inoue, Appl. Phys. Lett. 40, 719 (1982).
- (1982) Appl. Phys. Lett. , vol.40 , pp. 719
- Miyagi, M.¹ Wada, K.² Osaka, J.³ Inoue, N.⁴

13
- 0001117577
- K. Nauka, H. C. Gatos, and J. Logowski, Appl. Phys. Lett. 43, 241 (1983).
- (1983) Appl. Phys. Lett. , vol.43 , pp. 241
- Nauka, K.¹ Gatos, H.C.² Logowski, J.³

14
- 0001597898
- J. W. Hwang and D. K. Schroder, J. Appl. Phys. 59, 2476 (1986).
- (1986) J. Appl. Phys. , vol.59 , pp. 2476
- Hwang, J.W.¹ Schroder, D.K.²

15
- 85033531668
- edited by H. Queisser, J. E. Chung, K. E. Bean, T. J. Shaffner, and H. Tsuya, The Electrochemical Society Softbound Proceeding Series Electrochemical Society, Pennington, NJ, PV94-1
- E. Simoen, J. Vanhellemont, A. Kaniava, and C. Clayes, in Degradation of Electronic Devices due to Operation as well as Crystaline and Process-Induced Defects, edited by H. Queisser, J. E. Chung, K. E. Bean, T. J. Shaffner, and H. Tsuya, The Electrochemical Society Softbound Proceeding Series (Electrochemical Society, Pennington, NJ, 1993), PV94-1, p. 72.
- (1993) Degradation of Electronic Devices Due to Operation As Well As Crystaline and Process-Induced Defects , pp. 72
- Simoen, E.¹ Vanhellemont, J.² Kaniava, A.³ Clayes, C.⁴

16
- 0000906887
- A. Goetzberger and W. Shockley, J. Appl. Phys. 31, 1821 (1960).
- (1960) J. Appl. Phys. , vol.31 , pp. 1821
- Goetzberger, A.¹ Shockley, W.²

17
- 0017534569
- H. H. Busta and H. A. Waggener, J. Electrochem. Soc. 124, 1424 (1977).
- (1977) J. Electrochem. Soc. , vol.124 , pp. 1424
- Busta, H.H.¹ Waggener, H.A.²

18
- 36549090752
- M. L. Polignano, G. F. Cerofolini, H. Bender, and C. Claeys, J. Appl. Phys. 64, 869 (1988).
- (1988) J. Appl. Phys. , vol.64 , pp. 869
- Polignano, M.L.¹ Cerofolini, G.F.² Bender, H.³ Claeys, C.⁴

19
- 0342555003
- R. W. Gregor and W. H. Stinebaugh, Jr., J. Appl. Phys. 64, 2079 (1988).
- (1988) J. Appl. Phys. , vol.64 , pp. 2079
- Gregor, R.W.¹ Stinebaugh Jr., W.H.²

20
- 0026105748
- M. Miyazaki, M. Sano, S. Sumita, and N. Fujino, Jpn. J. Appl. Phys., Part 2 30, L295 (1991).
- (1991) Jpn. J. Appl. Phys., Part 2 , vol.30
- Miyazaki, M.¹ Sano, M.² Sumita, S.³ Fujino, N.⁴

21
- 0001441664
- S. N. Chakravarti, P. L. Garbarino, and K. Murty, Appl. Phys. Lett. 40, 581 (1982).
- (1982) Appl. Phys. Lett. , vol.40 , pp. 581
- Chakravarti, S.N.¹ Garbarino, P.L.² Murty, K.³

22
- 0020845996
- J. W. Slotboom, M. J. J. Theunissen, and A. J. R. de Kock, IEEE Trans. Electron Devices EDL-4, 403 (1983).
- (1983) IEEE Trans. Electron Devices , vol.EDL-4 , pp. 403
- Slotboom, J.W.¹ Theunissen, M.J.J.² De Kock, A.J.R.³

23
- 84989719195
- M. Kittler and W. Seifert, Phys. Status Solidi A 99, 559 (1987).
- (1987) Phys. Status Solidi A , vol.99 , pp. 559
- Kittler, M.¹ Seifert, W.²

24
- 0000283961
- J. Vanhellemont, E. Simoen, A. Kaniava, M. Libezny, and C. Claeys, J. Appl. Phys. 77, 5669 (1995).
- (1995) J. Appl. Phys. , vol.77 , pp. 5669
- Vanhellemont, J.¹ Simoen, E.² Kaniava, A.³ Libezny, M.⁴ Claeys, C.⁵

25
- 36449005856
- Y. Murakami and T. Shingyouji, J. Appl. Phys. 75, 3548 (1994).
- (1994) J. Appl. Phys. , vol.75 , pp. 3548
- Murakami, Y.¹ Shingyouji, T.²

26
- 0029275274
- Y. Murakami, H. Abe, and T. Shingyouji, Jpn. J. Appl. Phys., Part 1 34, 1477 (1995).
- (1995) Jpn. J. Appl. Phys., Part 1 , vol.34 , pp. 1477
- Murakami, Y.¹ Abe, H.² Shingyouji, T.³

27
- 36449002493
- Y. Murakami and T. Shingyouji, Appl. Phys. Lett. 75, 2591 (1994).
- (1994) Appl. Phys. Lett. , vol.75 , pp. 2591
- Murakami, Y.¹ Shingyouji, T.²

28
- 11644273705
- edited by H. Queisser, J. E. Chung, K. E. Bean, T. J. Shaffner, and H. Tsuya, The Electrochemical Society Softbound Proceeding Series Electrochemical Society, Pennington, NJ, PV94-1
- Y. Murakami, Y. Satou, H. Furuya, H. Abe, and T. Shingyouji, in Degradation of Electronic Devices due to Operation as well as Crystaline and Process-Induced Defects, edited by H. Queisser, J. E. Chung, K. E. Bean, T. J. Shaffner, and H. Tsuya, The Electrochemical Society Softbound Proceeding Series (Electrochemical Society, Pennington, NJ, 1993), PV94-1, p. 82.
- (1993) Degradation of Electronic Devices Due to Operation As Well As Crystaline and Process-Induced Defects , pp. 82
- Murakami, Y.¹ Satou, Y.² Furuya, H.³ Abe, H.⁴ Shingyouji, T.⁵

29
- 0000488874
- D. Gilles, E. K. Weber, and S. K. Hahn, Phys. Rev. 64, 196 (1990).
- (1990) Phys. Rev. , vol.64 , pp. 196
- Gilles, D.¹ Weber, E.K.² Hahn, S.K.³

30
- 85034310523
- Extended Abstracts The Japan Society of Applied Physics and Related Societies (in Japanese)
- K. Kurita, Y. Murakami, M. Kimura, and T. Shingyouji, Extended Abstracts (the 42nd Spring Meeting, 1995), The Japan Society of Applied Physics and Related Societies (in Japanese).
- (1995) 42nd Spring Meeting
- Kurita, K.¹ Murakami, Y.² Kimura, M.³ Shingyouji, T.⁴

31
- 0003879668
- Wiley, New York
- A. S. Grove, Physics and Technology of Semiconductor Devices (Wiley, New York, 1967).
- (1967) Physics and Technology of Semiconductor Devices
- Grove, A.S.¹

32
- 0019553016
- T. Sakurai and T. Sugano, J. Appl. Phys. 52, 2889 (1981).
- (1981) J. Appl. Phys. , vol.52 , pp. 2889
- Sakurai, T.¹ Sugano, T.²

33
- 0021519639
- E. H. Poindexter, G. J. Gerardi, M.-E. Rueckel, P. J. Caplan, N. M. Johnson, and D. K. Biegelsen, J. Appl. Phys. 56, 2844 (1984).
- (1984) J. Appl. Phys. , vol.56 , pp. 2844
- Poindexter, E.H.¹ Gerardi, G.J.² Rueckel, M.-E.³ Caplan, P.J.⁴ Johnson, N.M.⁵ Biegelsen, D.K.⁶

34
- 0030406642
- P. Smeys, P. B. Griffin, Z. U. Rek, I. D. Wolf, and K. C. Saraswat, Tech. Dig. Int. Electron Devices Meet., 709 (1996).
- (1996) Tech. Dig. Int. Electron Devices Meet. , pp. 709
- Smeys, P.¹ Griffin, P.B.² Rek, Z.U.³ Wolf, I.D.⁴ Saraswat, K.C.⁵

35
- 0022285235
- S. S. Chan, C. J. Varker, J. D. Whitfield, and R. W. Carpenter, Mater. Res. Soc. Symp. Proc. 46, 281 (1985).
- (1985) Mater. Res. Soc. Symp. Proc. , vol.46 , pp. 281
- Chan, S.S.¹ Varker, C.J.² Whitfield, J.D.³ Carpenter, R.W.⁴

36
- 84990719368
- K. Schmarz, F.-G. Kirscht, H. Klose, H. Richter, and K. Tittelbach-Helmrich, Phys. Status Solidi A 100, 567 (1987).
- (1987) Phys. Status Solidi A , vol.100 , pp. 567
- Schmarz, K.¹ Kirscht, F.-G.² Klose, H.³ Richter, H.⁴ Tittelbach-Helmrich, K.⁵

37
- 84956066578
- J. Ryuta, E. Morita, T. Tanaka, and Y. Shimanuki, Jpn. J. Appl. Phys., Part 2 29, L1947 (1990).
- (1990) Jpn. J. Appl. Phys., Part 2 , vol.29
- Ryuta, J.¹ Morita, E.² Tanaka, T.³ Shimanuki, Y.⁴

38
- 0026630810
- H. Yamagishi, I. Fusegawa, N. Fujimaki, and M. Katayama, Semicond. Sci. Technol. 7, A135 (1992).
- (1992) Semicond. Sci. Technol. , vol.7
- Yamagishi, H.¹ Fusegawa, I.² Fujimaki, N.³ Katayama, M.⁴

39
- 0029373211
- M. Hourai, T. Nagashima, E. Kajita, S. Miki, M. Okui, and T. Shigematsu, J. Electrochem. Soc. 142, 3193 (1995).
- (1995) J. Electrochem. Soc. , vol.142 , pp. 3193
- Hourai, M.¹ Nagashima, T.² Kajita, E.³ Miki, S.⁴ Okui, M.⁵ Shigematsu, T.⁶

40
- 0001635004
- M. Itsumi, M. Tomita, and Y. Yamawaki, J. Appl. Phys. 78, 1940 (1995).
- (1995) J. Appl. Phys. , vol.78 , pp. 1940
- Itsumi, M.¹ Tomita, M.² Yamawaki, Y.³

41
- 0001274178
- M. Itsumi, H. Akiya, T. Ueki, M. Tomita, and Y. Yamawaki, J. Appl. Phys. 78, 5984 (1995).
- (1995) J. Appl. Phys. , vol.78 , pp. 5984
- Itsumi, M.¹ Akiya, H.² Ueki, T.³ Tomita, M.⁴ Yamawaki, Y.⁵

42
- 0010405614
- H. Shirai, K. Kanaya, A. Yamaguchi, and F. Shimura, J. Appl. Phys. 66, 5651 (1989).
- (1989) J. Appl. Phys. , vol.66 , pp. 5651
- Shirai, H.¹ Kanaya, K.² Yamaguchi, A.³ Shimura, F.⁴

43
- 6144227315
- Honolulu, Hawaii, May 16-21, 1993 The Electrochemical Society, Pennington, NJ
- T. Shiota, E. Morita, H. Furuya, J. Furukawa, T. Shingyouji, and Y. Shimanuki, Proceedings of the Symposium on Contamination Control and Defect Reduction in Semiconductor Manufacturing II, Honolulu, Hawaii, May 16-21, 1993 (The Electrochemical Society, Pennington, NJ, 1994), p. 211.
- (1994) Proceedings of the Symposium on Contamination Control and Defect Reduction in Semiconductor Manufacturing II , pp. 211
- Shiota, T.¹ Morita, E.² Furuya, H.³ Furukawa, J.⁴ Shingyouji, T.⁵ Shimanuki, Y.⁶

44
- 0024478804
- G. Basso, B. Pellegrini, M. L. Polignano, R. Saletti, and P. Terreni, IEEE Electron Device Lett. 10, 37 (1989).
- (1989) IEEE Electron Device Lett. , vol.10 , pp. 37
- Basso, G.¹ Pellegrini, B.² Polignano, M.L.³ Saletti, R.⁴ Terreni, P.⁵

45
- 0342373289
- G. F. Celofolini and M. L. Polignano, Appl. Phys. A: Solids Surf. 50, 273 (1990).
- (1990) Appl. Phys. A: Solids Surf. , vol.50 , pp. 273
- Celofolini, G.F.¹ Polignano, M.L.²

46
- 36449004545
- E. Simoen, G. Bosman, J. Vanhellemont, and C. Clayes, Appl. Phys. Lett. 66, 2507 (1995).
- (1995) Appl. Phys. Lett. , vol.66 , pp. 2507
- Simoen, E.¹ Bosman, G.² Vanhellemont, J.³ Clayes, C.⁴

47
- 0002868708
- edited by R. H. Kingston University of Pennsylvania, Philadelphia, PA
- A. L. McWorther, Semiconductor Surface Physics, edited by R. H. Kingston (University of Pennsylvania, Philadelphia, PA, 1957), p. 207.
- (1957) Semiconductor Surface Physics , pp. 207
- McWorther, A.L.¹

48
- 24544459259
- F. N. Hooge, Phys. Lett. 29A, 139 (1969).
- (1969) Phys. Lett. , vol.29 A , pp. 139
- Hooge, F.N.¹

49
- 21544480403
- D. M. Fleetwood, P. S. Winokur, R. A. Reber, Jr., T. L. Meisenheimer, J. R. Schwank, M. R. Shaneyfelt, and L. C. Riewe, J. Appl. Phys. 73, 5058 (1993).
- (1993) J. Appl. Phys. , vol.73 , pp. 5058
- Fleetwood, D.M.¹ Winokur, P.S.² Reber Jr., R.A.³ Meisenheimer, T.L.⁴ Schwank, J.R.⁵ Shaneyfelt, M.R.⁶ Riewe, L.C.⁷

50
- 0020272224
- Behavior and role of oxygen in silicon wafers for VLSI
- edited by C. J. Dell'Oca and W. M. Bullis Electrochemical Society, Princeton. NJ
- F. Shimura, "Behavior and role of oxygen in silicon wafers for VLSI," in VLSI Science and Technology/1982, edited by C. J. Dell'Oca and W. M. Bullis (Electrochemical Society, Princeton. NJ, 1982), pp. 17-32.
- (1982) VLSI Science and Technology/1982 , pp. 17-32
- Shimura, F.¹

51
- 0021424687
- G. F. Celofolini and M. L. Polignano, J. Appl. Phys. 55, 3823 (1984).
- (1984) J. Appl. Phys. , vol.55 , pp. 3823
- Celofolini, G.F.¹ Polignano, M.L.²

52
- 0021476581
- G. F. Celofolini and M. L. Polignano, J. Appl. Phys. 56, 1230 (1984).
- (1984) J. Appl. Phys. , vol.56 , pp. 1230
- Celofolini, G.F.¹ Polignano, M.L.²

53
- 0742310727
- G. F. Celofolini and M. L. Polignano, J. Appl. Phys. 64, 6349 (1988).
- (1988) J. Appl. Phys. , vol.64 , pp. 6349
- Celofolini, G.F.¹ Polignano, M.L.²

54
- 84990642691
- G. F. Celofolini and M. L. Polignano, Phys. Status Solidi A 100, 177 (1987).
- (1987) Phys. Status Solidi A , vol.100 , pp. 177
- Celofolini, G.F.¹ Polignano, M.L.²

55
- 0011384544
- B. Pellegrini, J. Appl. Phys. 69, 1071 (1991).
- (1991) J. Appl. Phys. , vol.69 , pp. 1071
- Pellegrini, B.¹

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