Bond strain and defects at interfaces in high-k gate stacks

Microelectronics Reliability

Volumn 45, Issue 5-6, 2005, Pages 770-778

  Lucovsky, G ^a,c   Phillips, J C ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b RUTGERS UNIVERSITY   (United States)

^c North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; DEFECTS; DIELECTRIC MATERIALS; ELLIPSOMETRY; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); PLASTIC DEFORMATION; SILICA; STRAIN; THERMAL EXPANSION; X RAY PHOTOELECTRON SPECTROSCOPY;

BOND STRAIN; CRYSTALLINE SI; HIGH-K GATE STACKS; SINGLE WAVELENGTH ELLIPSOMETRY (SWE);

GATES (TRANSISTOR);

EID: 14644412902     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.11.051     Document Type: Conference Paper

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