Electrical evaluation of defects and dopants in diamond

New Diamond and Frontier Carbon Technology

Volumn 14, Issue 2, 2004, Pages 109-128

  Kalish, Rafi ^a   Saguy, Cecile ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

Doped and intrinsic diamond; Electrical methods of characterization; Electrical properties of diamond; Synthetic and natural diamond

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; HALL EFFECT; ION IMPLANTATION; PHOTOCONDUCTIVITY; SEEBECK EFFECT; SEMICONDUCTOR GROWTH;

DOPING EFFICIENCY; HOMOEPITAXIAL DIAMOND LAYERS;

SEMICONDUCTING DIAMONDS;

EID: 1442314642     PISSN: 13449931     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Review

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