Formation of delta-doped, buried conducting layers in diamond, by high-energy, B-ion implantation

Diamond and Related Materials

Volumn 7, Issue 10, 1998, Pages 1429-1432

  Uzan Saguy, C ^a   Kalish, R ^a   Walker, R ^b   Jamieson, D N ^b   Prawer, S ^b  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b UNIVERSITY OF MELBOURNE   (Australia)

Author keywords

Delta doping; Doping; Ion implantation; Laser treatment

Indexed keywords

ACTIVATION ENERGY; ANNEALING; BORON; CARRIER CONCENTRATION; ELECTRIC CONTACTS; ELECTRIC PROPERTIES; ELECTRON TRANSPORT PROPERTIES; GRAPHITIZATION; HALL EFFECT; ION IMPLANTATION; LASER APPLICATIONS; TEMPERATURE;

ACCEPTOR CONCENTRATION; DELTA DOPING; FURNACE ANNEALING; LASER TREATMENT; ROOM TEMPERATURE HALL MOBILITY;

SEMICONDUCTING DIAMONDS;

DIAMOND;

EID: 0032194609     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(98)00231-3     Document Type: Article

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