The nature of damage in ion-implanted and annealed diamond

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 626-633

  Kalish, R ^a   Reznik, A ^a   Nugent, K W ^b   Prawer, S ^b  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b UNIVERSITY OF MELBOURNE   (Australia)

Author keywords

Annealing; Damaged diamond; Graphitization; Interstitials; Ion implantation

Indexed keywords

AMORPHIZATION; ANNEALING; CHEMICAL BONDS; CRYSTAL ORIENTATION; DENSITY (SPECIFIC GRAVITY); ELECTRIC CONDUCTIVITY OF SOLIDS; GRAPHITIZATION; ION IMPLANTATION; POINT DEFECTS; RAMAN SPECTROSCOPY; REACTION KINETICS; THERMAL EFFECTS;

CRITICAL DENSITY;

SEMICONDUCTING DIAMONDS;

EID: 0033513673     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00857-X     Document Type: Article

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