Instantaneous annealing of CVD diamond during high dose-rate ion implantation

Diamond and Related Materials

Volumn 8, Issue 2-5, 1999, Pages 877-881

  Kalish, R ^a   Uzan Saguy, C ^a   Ran, B ^a   Ferber, H ^b   Guettler, H ^b   Zachai, R ^b  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b DAIMLER AG   (Germany)

Author keywords

Annealing; Diamond; Doping; Ion implantation; Ohmic contacts

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY MEASUREMENT; ION IMPLANTATION; OHMIC CONTACTS; RAMAN SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY;

HIGH DOSE-RATE ION IMPLANTATION;

DIAMOND FILMS;

EID: 0032622260     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(98)00290-8     Document Type: Article

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