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Volumn 8, Issue 8-9, 1999, Pages 1470-1475
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Electrical Properties of B-doped homoepitaxial diamond films grown from UHP gas sources
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Author keywords
Boron doping; Catholuminescence; Diamond films; Electrical properties; Hall effect measurement; N V center; Nitrogen
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Indexed keywords
ANNEALING;
CARRIER CONCENTRATION;
CATHODOLUMINESCENCE;
CHEMICAL VAPOR DEPOSITION;
CONTAMINATION;
DOPING (ADDITIVES);
ELECTRIC PROPERTIES;
HALL EFFECT;
ION BOMBARDMENT;
NITROGEN;
SEMICONDUCTING BORON;
VACUUM APPLICATIONS;
HALL MOBILITY;
LUMINESCENCE INTENSITY;
NITROGEN CONTAMINATION;
NITROGEN VACANCY CENTERS;
DIAMOND FILMS;
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EID: 0032594308
PISSN: 09259635
EISSN: None
Source Type: Journal
DOI: 10.1016/s0925-9635(99)00073-4 Document Type: Article |
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Times cited : (24)
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References (8)
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