Electrically active sulfur-defect complexes in sulfur implanted diamond

Journal of Applied Physics

Volumn 94, Issue 6, 2003, Pages 3923-3930

  Kalish, R ^a   Uzan Saguy, C ^a   Walker, R ^b   Prawer, S ^b  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b UNIVERSITY OF MELBOURNE   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; HALL EFFECT; ION IMPLANTATION; SULFUR;

SULFUR-DEFECT COMPLEXES;

DIAMONDS;

EID: 0141921417     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1598637     Document Type: Article

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