Advanced diffusion studies with isotopically controlled materials

Solid State Communications

Volumn 133, Issue 11 SPEC. ISS., 2005, Pages 727-735

  Bracht, Hartmut A ^a   Silvestri, Hughes H ^b   Haller, Eugene E ^b,c  

^a UNIVERSITY OF MÜNSTER   (Germany)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

A. Semiconductors; C. Point defects; D. Self diffusion; D. SIMS; D. Stable isotopes; Foreign atom diffusion

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GERMANIUM ALLOYS; HETEROJUNCTIONS; INFRARED SPECTROSCOPY; ISOTOPES; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; OXIDATION; PARAMAGNETIC RESONANCE; POINT DEFECTS; POSITRON ANNIHILATION SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS;

ELECTRONIC DATABASES; FOREIGN ATOM DIFFUSION; ISOTOPICALLY CONTROLLED MATERIALS; OXYMORONS; SELF-DIFFUSION COEFFICIENTS; STABLE ISOTOPES; THERMAL PROCESSING;

DIFFUSION;

EID: 14144255932     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2004.12.024     Document Type: Article

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