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Volumn 408, Issue 6808, 2000, Pages 69-72

Large disparity between gallium and antimony self-diffusion in gallium antimonide

(6) Bracht, H a,b Nicols, S P a Walukiewicz, W a Silveira, J P c Briones, F c Haller, E E a

a UNIVERSITY OF CALIFORNIA (United States)

b UNIVERSITY OF MÜNSTER (Germany)

c INSTITUTO DE MICROELECTRÓNICA DE MADRID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; GALLIUM; GALLIUM ANTIMONIDE; GALLIUM ARSENIDE; GERMANIUM; ISOTOPE; SILICON; UNCLASSIFIED DRUG;

ARTICLE; DIFFUSION; ELECTRONICS; ENTHALPY; KINETICS; MELTING POINT; MOLECULAR DYNAMICS; PRIORITY JOURNAL; SEMICONDUCTOR;

EID: 0034597776 PISSN: 00280836 EISSN: None Source Type: Journal
DOI: 10.1038/35040526 Document Type: Article

Times cited : (89)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.