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Surface and Coatings Technology

Volumn 193, Issue 1-3 SPEC. ISS., 2005, Pages 350-355

Investigation of plasma oxynitridation of Si(001) by NH3/N2O/Ar remote plasma processing

(4) Kang, S C a Oh, C H a Lee, N E a Kwon, T K b

a Sungkyunkwan University (South Korea)

b Jusung Engineering Company Limited (South Korea)

Author keywords

Plasma oxynitridation; Remote plasma; Silicon oxynitride

Indexed keywords

ARGON; COMPOSITION; ELLIPSOMETRY; HIGH RESOLUTION ELECTRON MICROSCOPY; NITRIDES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; SILICON; SUBSTRATES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

LAYER THICKNESS; PLASMA EXPOSURE TIME; PLASMA OXYNITRIDATION; SILICON OXYNITRIDE LAYERS;

NITRIFICATION;

CHEMICAL VAPOR DEPOSITION;

EID: 13844276653 PISSN: 02578972 EISSN: None Source Type: Journal
DOI: 10.1016/j.surfcoat.2004.08.117 Document Type: Article

Times cited : (2)

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