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Journal of Applied Physics

Volumn 80, Issue 2, 1996, Pages 769-780

Epitaxial Si(001) grown at 80-750 °C by ion-beam sputter deposition: Crystal growth, doping, and electronic properties

(3) Lee, N E a Xue, G a Greene, J E a

a University of Illinois at Urbana Champaign (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001283853 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.362885 Document Type: Article

Times cited : (25)

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