New kinetic growth instabilities in Si(001) homoepitaxy

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 1-4

  Schelling, C ^a   Springholz, G ^a   Schaffler F ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE ROUGHNESS;

HOMOEPITAXIAL SILICON LAYERS; KINETIC GROWTH INSTABILITY;

SEMICONDUCTING SILICON;

EID: 0034224983     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00823-3     Document Type: Article

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