Homoepitaxy of silicon at low temperature on clean and Ga-covered substrates

Thin Solid Films

Volumn 294, Issue 1-2, 1997, Pages 69-71

  Gallas, B ^a   Berbezier, I ^a   Derrien, J ^a  

^a AIX MARSEILLE UNIVERSITY   (France)

Author keywords

Homoepitaxy; Silicon

Indexed keywords

MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SURFACE ACTIVE AGENTS;

HOMOEPITAXY;

SEMICONDUCTING SILICON;

EID: 0031074058     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09463-1     Document Type: Article

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