Evolution of surface roughness in epitaxial Si0.7Ge0.3(001) as a function of growth temperature (200-600 °C) and Si(001) substrate miscut

Journal of Applied Physics

Volumn 80, Issue 4, 1996, Pages 2199-2210

  Lee, N E ^a   Cahill, David G ^a   Greene, J E ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CORRELATION METHODS; DISLOCATIONS (CRYSTALS); ION BEAMS; KINETIC THEORY; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SPUTTER DEPOSITION; STRAIN; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

COHERENT ISLAND FORMATION; FILM THICKNESS; HEIGHT DIFFERENCE CORRELATION FUNCTION; SILICON GERMANIDE; SUBSTRATE MISCUT; ULTRAHIGH VACUUM ION BEAM SPUTTER DEPOSITION;

SURFACE ROUGHNESS;

EID: 0030212714     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363113     Document Type: Article

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