ESR characterization of SiC bulk crystals and SiO2/SiC interface

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1025-1028

  Isoya, J ^a   Kosugi, R ^b   Fukuda, K ^b   Yamasaki, S ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Defects; ESR; Interface traps; SiO2 SiC

Indexed keywords

DEFECTS; PARAMAGNETIC RESONANCE; SILICA; SILICON CARBIDE; SUBSTRATES; ANISOTROPY; CRYSTALS; DIELECTRIC PROPERTIES; ELECTRON TRAPS; ETCHING; INTERFACES (MATERIALS); MAGNETIC FIELDS; OXIDATION;

BULK CRYSTALS; CRYSTAL AXIS; EPR PARAMETERS; INTERFACE TRAPS; LINE POSITIONS; OFF-AXIS; SIO2/SIC; SIO2/SIC INTERFACE;

SILICON OXIDES; SILICON CARBIDE;

EID: 0036429176     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1025     Document Type: Conference Paper

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