The neutral silicon vacancy in SiC: Ligand hyperfine interaction

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 501-504

  Wagner, Mt ^a   Thinh, N Q ^a   Son, N T ^a   Baranov, P G ^b   Mokhov, E N ^b   Hallin, C ^c   Chen, W M ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b IOFFE INSTITUTE   (Russian Federation)

^c ABB CORPORATE RESEARCH   (Sweden)

Author keywords

Electron irradiation; Ligand hyperfine interaction; ODMR; Silicon vacancy

Indexed keywords

CRYSTAL LATTICES; ELECTRON IRRADIATION; LIGANDS; MAGNETIC RESONANCE; SILICON CARBIDE;

LATTICE SITES; LIGAND HYPERFINE INTERACTION; OPTICALLY DETECTED MAGNETIC RESONANCE (ODMR); SILICON VACANCY; HYPERFINE INTERACTIONS; HYPERFINE LINES; HYPERFINE PARAMETERS; HYPERFINE TENSORS; NEAREST NEIGHBORS; NEGATIVELY CHARGED; ODMR; SILICON VACANCIES;

VACANCIES; ELECTRON IRRADIATION;

EID: 34247215551     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.501     Document Type: Article

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