ESR studies of defects in p-type 6H-SiC irradiated with 3MeV-electrons

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 615-618

  Cha, D ^a,b   Itoh, H ^a,d   Morishita, N ^a   Kawasuso, A ^a   Ohshima, T ^a   Watanabe, Y ^a   Ko, J ^b   Lee, K ^c   Nashiyama, I ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b Kunsan National University   (South Korea)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^d UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Annealing; Defects; Electron Irradiation; Electron Spin Resonance

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; ELECTRON BEAMS; ELECTRON SPIN RESONANCE SPECTROSCOPY; REDUCTION; SEMICONDUCTING SILICON COMPOUNDS;

ELECTRON IRRADIATION;

SILICON CARBIDE;

EID: 3743135129     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.615     Document Type: Article

References (4)

1. T. Ohshima, M. Yoshikawa, H. Itoh, T. Takahashi, H. Okumura, S. Yoshida, and I. Nashiyama, Inst. Phys. Conf. Ser. 142 (1996), p.801.
2. H. Itoh, A. Kawasuso, T. Ohshima, M. Yoshikawa, I. Nashiyama, S. Tanigawa, S. Misawa, H. Okumura, and S. Yoshida, phys. stat. sol. (a) 162 (1997) p.173, and references therein.
3. L.A. de S. Balona and J.H.N. Loubser, J. Phys. C, 3 (1970) p.2344.
4. J. Schneider and K. Maier, Physica B 185 (1993) p.199.