A new pixel circuit for active matrix organic light emitting diodes

IEEE Electron Device Letters

Volumn 23, Issue 9, 2002, Pages 544-546

  Goh, Joon Chul ^b   Chung, Hoon Ju ^c   Jang, Jin ^a,d   Han, Chul Hi ^b  

^a IEEE

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c LG Display Co Ltd   (South Korea)

^d Kyung Hee University   (South Korea)

Author keywords

AMOLED; Device parameter variations; Pixel circuit; Poly Si TFT

Indexed keywords

ANODES; CAPACITORS; COMPUTER SIMULATION; ELECTRIC CURRENTS; THIN FILM CIRCUITS; THIN FILM TRANSISTORS;

ACTIVE-MATRIX ORGANIC LIGHT-EMITTING DIODES (AMOLED);

LIGHT EMITTING DIODES;

EID: 0036712343     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.802684     Document Type: Article

References (5)

1. Polysilicon VGA active matrix OLED displays-Technology and performance
2. The impact of the transient response of organic light emitting diodes on the design of active matrix OLED displays
3. Analog-circuit simulation of the current-programmed active-matrix pixel electrode circuits based on poly-Si TFT for organic light-emitting displays
4. A 13.0-inch AM-OLED display with top emitting structure and adaptive current mode programmed pixel circuit
5. A new poly-Si TFT pixel circuit scheme for active-matrix organic light emitting diode displays