Fabrication and electrical properties of field effect transistor based on ferroelectric insulator and pentacene film

Current Applied Physics

Volumn 4, Issue 2-4, 2004, Pages 210-212

  Matsuo, Yasumitsu ^a   Ijichi, Takehiko ^a   Hatori, Junko ^a   Ikehata, Seiichiro ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Ferroelectrics; Field effect device; Molecular electronics

Indexed keywords

EID: 1542401180     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2003.11.011     Document Type: Article

References (8)

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