Low temperature ECR-plasma assisted MOCVD microcrystalline and amorphous GaN deposition and characterization for electronic devices

Materials Research Society Symposium - Proceedings

Volumn 536, Issue , 1999, Pages 245-250

  Hassan, Z ^a   Kordesch, M E ^a   Jadwisffinzak, W M ^a   Lozykowski, H J ^a   Halverson, W ^a   Colter, P C ^a  

^a OHIO UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; ELECTRON DEVICES; ENERGY GAP; INFRARED SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; QUARTZ; SAPPHIRE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON;

GALLIUM NITRIDE; GROWTH RATES; OPTICAL BAND GAP;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032591580     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (5)

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