Low temperature growth of gallium nitride

Diamond and Related Materials

Volumn 9, Issue 3, 2000, Pages 456-459

  Young, W T ^a   Silva, S R P ^a   Anguita, J V ^a   Shannon, J M ^a   Homewood, K P ^a   Sealy, B J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH; CRYSTAL STRUCTURE; GRAIN GROWTH; GRAIN SIZE AND SHAPE; LOW TEMPERATURE PROPERTIES; NANOSTRUCTURED MATERIALS; POROSITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GLASS; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE; RADIO FREQUENCY REACTIVE SPUTTERING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033729561     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(99)00281-2     Document Type: Article

References (8)

1. J.I. Pankove, T.D. Moustakas (Eds.), Semiconductors and Semimetals Vol. 50 Academic Press, New York, 1998.
2. H.J. Hovel, J.J. Cuomo, Appl. Phys. Lett. 20 (1972) 71.
3. E. Lakshmi, B. Mathur, A.B. Bhattacharya, V.P. Bhargava, Thin Solid Films 74 (1980) 77.
4. J. Ross, M. Rubin, Mater. Lett. 12 (1991) 215.
5. S. Nonomura et al., J. Non-Cryst. Solids 198-200 (1996) 174.
6. K. Abe et al., J. Non-Cryst. Solids 227-230 (1998) 1096.
7. N.P. Barradas, C. Jeynes, R.P. Webb, Appl. Phys. Lett. 71 (1997) 291.
8. W.T. Young et al., Proceedings ICN, (1999) in press.