Fluorine-modified low-k a-SiOC:H composite films prepared by plasma enhanced chemical vapor deposition

Thin Solid Films

Volumn 447-448, Issue , 2004, Pages 674-680

  JangJean, Shiuh Ko ^a   Liu, Chuan Pu ^a   Wang, Ying Lang ^b,c   Hwang, Weng Sing ^a   Tseng, Wei Tsu ^a,d   Chen, Sheng Wen ^b   Lo, Kuang Yao ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c NATIONAL CHIAYI UNIVERSITY   (Taiwan)

^d IBM   (United States)

Author keywords

Fluoring modified; Hardness; Low dielectric constant

Indexed keywords

CHEMICAL MODIFICATION; COMPOSITE MATERIALS; COMPOSITION; ELECTRIC BREAKDOWN OF SOLIDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HARDNESS; LEAKAGE CURRENTS; LIGHT REFRACTION; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX;

PRECURSORS; STRESS MIGRATION;

THIN FILMS;

EID: 1342323631     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.09.038     Document Type: Conference Paper

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