Characterization of low dielectric constant plasma enhanced chemical vapor deposition fluorinated silicon oxide films as intermetal dielectric materials

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1509-1513

  Kim, K ^a   Kwon, D H ^a,b   Nallapati, G ^a   Lee, G S ^a  

^a LOUISIANA STATE UNIVERSITY   (United States)

^b Kyungil University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN FIELD; BREAKDOWN STRENGTHS; DEPOSITION TEMPERATURES; DIELECTRIC CONSTANTS; DISILANES; EFFECTIVE OXIDE CHARGE; ETCH RATES; FOURIER TRANSFORM INFRARED SPECTRA; HIGH-FREQUENCY CAPACITANCE-VOLTAGE MEASUREMENTS; INTER-METAL DIELECTRICS; LOW DIELECTRIC CONSTANTS; METAL-OXIDE- SEMICONDUCTORCAPACITORS; NITROUS OXIDE; PARALLEL PLATES; PLASMA REACTORS; TEMPERATURE RANGE; TETRAFLUOROMETHANE; WAVE NUMBERS;

CAPACITANCE; CAPACITORS; CHEMICAL VAPOR DEPOSITION; DEPOSITION; INFRARED SPECTROSCOPY; MOS CAPACITORS; NITROGEN OXIDES; OXIDE FILMS; PARALLEL FLOW; PERMITTIVITY; PLASMA DEPOSITION; REFRACTIVE INDEX; SILICON COMPOUNDS; SILICON OXIDES; SILICON WAFERS;

DIELECTRIC MATERIALS;

EID: 0000042528     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581178     Document Type: Article

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