Comparison of C2F6 and FASi-4 as fluorine dopant sources in plasma enhanced chemical vapor deposited fluorinated silica glass films

Journal of Materials Research

Volumn 12, Issue 1, 1997, Pages 70-74

  Yoo, Woo Sik ^a   Swope, Richard ^a   Sparks, Barbara ^a   Mordo, David ^a  

^a NOVELLUS SYSTEMS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ENERGY GAP; FILMS; FLUORINE; PHYSICAL PROPERTIES; PLASMAS; SEMICONDUCTOR DOPING; STRESSES;

GAP FILLING; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA GLASS FILM; TETRAETHYLORTHOSILICATE;

FUSED SILICA;

EID: 0030835203     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1997.0012     Document Type: Article

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