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Volumn 223, Issue 2, 2001, Pages 573-579

Superior temperature performance of 1.3 μm AlGaInAs-based semiconductor lasers investigated at high pressure and low temperature

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EID: 0035624922     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200101)223:2<573::AID-PSSB573>3.0.CO;2-I     Document Type: Article
Times cited : (14)

References (9)
  • 4
    • 0001018290 scopus 로고    scopus 로고
    • High pressure in semiconductor physics II
    • A. R. ADAMS, M. SILVER, and J. ALLAM, in: High Pressure in Semiconductor Physics II, Semicond. Semimetals 553, 301 (1998).
    • (1998) Semicond. Semimetals , vol.553 , pp. 301
    • Adams, A.R.1    Silver, M.2    Allam, J.3
  • 6
    • 0003769722 scopus 로고
    • Properties of lattice-matched and strained indium gallium arsenide
    • Inspec (London)
    • V. A. WILKINSON, and A. R. ADAMS, in: Properties of Lattice-Matched and Strained Indium Gallium Arsenide, EMIS Datarev. Ser., Inspec (London) 83, 70 (1993).
    • (1993) EMIS Datarev. Ser. , vol.83 , pp. 70
    • Wilkinson, V.A.1    Adams, A.R.2
  • 7
    • 0004242002 scopus 로고
    • Properties of aluminium gallium arsenide
    • INSPEC (London)
    • V. A. WILKINSON, and A. R. ADAMS, in: Properties of Aluminium Gallium Arsenide, EMIS Datarev. Ser., INSPEC (London) 7, 82 (1993).
    • (1993) EMIS Datarev. Ser. , vol.7 , pp. 82
    • Wilkinson, V.A.1    Adams, A.R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.