Optical properties of quantum dots formed by activated spinodal decomposition for GaAs-based lasers emitting at approx. 1.3 μm

Microelectronic Engineering

Volumn 51, Issue , 2000, Pages 61-72

  Maximov, M V ^a   Tsatsul'nikov, A F ^a   Volovik, B V ^a   Bedarev, D A ^a   Shernyakov, Yu M ^a   Kaiander, I N ^a   Kondrat'eva, E Yu ^a   Zhukov, A E ^a   Kovsh, A R ^a   Maleev, N A ^c   Mikhrin, S S ^a   Ustinov, V M ^a   Musikhin, Yu G ^a   Kop'ev, P S ^a   Alferov, Zh I ^a   Heitz, R ^b   Ledentsov, N N ^b   Bimberg, D ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; TRANSMISSION ELECTRON MICROSCOPY;

ACTIVATED ALLOY DECOMPOSITION; SINGLE TRANSVERSE MODE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033689978     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00462-1     Document Type: Article

References (16)

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