High-temperature properties of GaInAs/AlGaAs lasers with improved carrier confinement by short-period superlattice quantum well barriers

Applied Physics Letters

Volumn 73, Issue 20, 1998, Pages 2863-2865

  Schafer F ^a   Mayer, B ^a   Reithmaier, J P ^a   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; HIGH TEMPERATURE PROPERTIES; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SUPERLATTICES; THERMIONIC EMISSION;

CARRIER CONFINEMENT; SUPERLATTICE QUANTUM WELL BARRIERS;

QUANTUM WELL LASERS;

EID: 0032538716     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122611     Document Type: Article

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