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Volumn 73, Issue 20, 1998, Pages 2863-2865
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High-temperature properties of GaInAs/AlGaAs lasers with improved carrier confinement by short-period superlattice quantum well barriers
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT DENSITY;
HIGH TEMPERATURE PROPERTIES;
MOLECULAR BEAM EPITAXY;
QUANTUM EFFICIENCY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
SUPERLATTICES;
THERMIONIC EMISSION;
CARRIER CONFINEMENT;
SUPERLATTICE QUANTUM WELL BARRIERS;
QUANTUM WELL LASERS;
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EID: 0032538716
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.122611 Document Type: Article |
Times cited : (47)
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References (15)
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