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Volumn 201, Issue , 1999, Pages 1139-1142
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In0.5Ga0.5As quantum dot lasers grown on (1 0 0) and (3 1 1)B GaAs substrates
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CURRENT DENSITY;
ELECTROLUMINESCENCE;
LASER MODES;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING BORON;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR LASERS;
SUBSTRATES;
SELF-ASSEMBLED QUANTUM DOTS;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 0032659950
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(99)00003-2 Document Type: Article |
Times cited : (2)
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References (12)
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