Octadecyltrichlorosilane self-assembled-monolayer islands as a self-patterned-mask for HF etching of SiO2 on Si

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1680-1685

  Komeda, T ^a   Namba, K ^a   Nishioka, Y ^a  

^a Texas Instruments Japan Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; ATOMIC FORCE MICROSCOPES; HF ETCHING; MONOLAYER ISLANDS; OCTADECYLTRICHLOROSILANE; OXIDIZED SI WAFERS; SELF-ASSEMBLED; SHAPE AND SIZE; SI (1 1 1); SIMULTANEOUS OBSERVATION; STEP MOTIONS; SUBMONOLAYER; ULTRA-THIN;

ATOMIC FORCE MICROSCOPY; ETCHING; MONOLAYERS; SILICON; SILICON WAFERS; SURFACE ROUGHNESS; THICKNESS MEASUREMENT;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 75149160968     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581142     Document Type: Article

References (30)

1. A. Ulman, An Introduction to Ultrathin Organic Films from LangmuirBlodgett to Self-Assembly (Academic Press Inc., CA, 1991).
2. R. C. Tiberio, H. G. Craighead, M. Lercel, T. Lau, C. W. Sheen, and D. L. Allara, Appl. Phys. Lett. 62, 476 (1993).
3. M. J. Lercel, G. F. Redinbo, H. G. Craighhead, C. W. Sheen, and D. L. Allara, Appl. Phys. Lett. 65, 974 (1994).
4. A. H. Carim and R. Sinclair, J. Electrochem. Soc. 134, 741 (1987).
5. M., Suzuki, Y. Kudoh, Y. Hornina, and R. Kaneko, Appl. Phys. Lett. 58, 2225 (1991).
6. Y. Hornina, M. Tomita, and T. Hayashi, Surf. Sci. 258, 147 (1991).
7. H. Watanabe, K. Fujita, and M. Ichikawa, Surf. Sci. 385, L952 (1997).
8. Y. Homma, M, Suzuki, and N. Yabumoto, J. Vac. Sci. Technol. A 10, 2055 (1992).
9. E. Rosencher, A. Straboni, S. Rigo, and G. Amsel, Appl. Phys. Lett. 34, 254 (1979).
10. R. Pfeffer and M., Ohring, J. Appl. Phys. 52, 777 (1981).
11. S. Rigo, F. Rochet, B. Agius, and A. Straboni, J. Electrochem. Soc. 129, 867 (1982).
12. G. S. Higashi, Y. J. Chabal, G. W. Trucks, and K.Ragavachari, Appl. Phys. Lett. 56, 656 (1990).
13. T. Koineda, Y. Morita, and H. Tokumoto, Surf. Sci. 348, 153 (1996).
14. M. J. Lercel, R. C. Tiberio, P. F. Chapman, H. G. Craighhead, C. W. Sheen, A. N. Parikh, and D. L. Aliara, J. Vac. Sci. Technol. B 11, 2823 (1993).
15. S. R. Waseman, G. M. Whitesides, I. M. Tidswell, B. M. Ocko, P. S.Pershan, and J. D. Axe, J. Am. Chem. Soc. 111, 5852 (1989).
16. R. Q. Hwang, J. Schroder, C. Gunther, and R. J. Behm, Phys. Rev. Lett. 67, 3279 (1991).
17. G. Potschke, J. Schroder, C. Gunther, R., Q. Hwang, and R. J. Behm, Surf. Sci. 251/252, 592 (1991).
18. R. Nishitani, A. Kasuya, S. Kubota, and Y. Nishina, J. Vac. Sci. Technol, A 7, 1919 (1989).
19. T. A. Whitten, Jr. and L. M. Sander, Phys. Rev. Lett. 47, 1400 (1981).
20. J. B. Brzoska, I. Ben Azouz, and F. Rodelez, Langmuir 10, 4367 (1994).
21. D. L. Allara, A, N. Parikh, and F. Rodelez, Langmuir 11, 2357 (1995).
22. P. O. Hahn and M. Henzler, J. Appl. Phys. 52, 4122 (1981).
23. E. A. Irene, E. Tierney, and J. Angillelo, J. Electrochem. Soc. 129, 2594 (1982).
24. E. P. EerNisse, Appl. Phys. Lett. 30, 290 (1977).
25. E. P. EerNisse, Appl. Phys. Lett. 35, 8 (1979).
26. T. Komeda, K. Namba, and Y. Nishioka, Appl. Phys. Lett. 70, 3398 (1997).
27. R. M. Feenstra, E. T. Yu, J. M. Woodall, P. D. Kirchner, C. L. Lin, and G. D. Pettit, Appl. Phys. Lett. 61, 795 (1992).
28. N. F. Mott, Philos. Mag. A 45, 323 (1980).
29. B. Leroy, Philos. Mag. B 55, 159 (1987).
30. E. Kobeda and E. A. Irene, J. Vac. Sci. Technol. B 5, 15 (1987).