Development of fully depleted, back-illuminated charge coupled devices

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5499, Issue , 2004, Pages 140-150

  Bebek, C J ^a   Groom, D E ^a   Holland, S E ^a   Karcher, A ^a   Kolbe, W F ^a   Palaio, N P ^a   Roe, N A ^a   Turko, B T ^a   Wang, G ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

150 mm diameter wafers; Back illuminated; CCD; Fully depleted; MBE; Refractory metal

Indexed keywords

150 MM DIAMETER WAFERS; BACK ILLUMINATED; FULLY DEPLETED; PARTIAL PROCESSING;

ELECTRIC CONDUCTIVITY; MOLECULAR BEAM EPITAXY; OBSERVATORIES; QUANTUM EFFICIENCY; REFRACTORY MATERIALS; SILICON WAFERS; SUBSTRATES;

CHARGE COUPLED DEVICES;

EID: 12744272149     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.552295     Document Type: Conference Paper

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