600 V-IGBT3: Trench field stop technology in 70 μm ultra thin wafer technology

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2003, Pages 63-66

  Ruething, H ^a   Umbach, F ^a   Hellmund, O ^b   Kanschat, P ^c   Schmidt, G ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^c Eupec GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC POTENTIAL; SEMICONDUCTOR JUNCTIONS; SHORT CIRCUIT CURRENTS; SWITCHING; TEMPERATURE; ULTRATHIN FILMS;

TRENCH FIELD STOP TECHNOLOGY;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0042440666     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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2. T. Laska, M. Münzer, F. Pfirsch, C. Schaeffer, T. Schmidt, "The Field Stop IGBT (FS IGBT) - A New Power Device Concept with a Great Improvement Potential", Proceedings of the 12th ISPSD, pp. 335-358, 2000
3. S. Dewar et al, "Soft Punch Through (SPT) - Setting new Standards in 1200V IGBT", Proc. PCIM Europe, 2000
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5. T. Matsudai, A. Nakagawa "Ultra High Switching Speed 600V Thin Wafer PT-IGBT Based on New Turn-Off Mechanism", Proceedings of the 14th ISPSD, pp.285-288, 2002
6. T. Laska et al., "The Field Stop IGBT Concept with an Optimized Diode", Proceedings PCIM, 2000
7. T. Laska, G. Miller, M. Pfaffenlehner, P. Türkes, D. Berger, B. Gutsmann, P. Kanschat, M. Münzer, "Short Circuit Properties of Trench- / Field-Stop-IGBTs - Design Aspects for a Superior Robustness", to be published on Proceedings of the 15th ISPSD, 2003
8. 3-Technology in New Low Cost Modules for Consumer Applications", to be published on Proceedings of PCIM, 2003 and Proceedings of PCIM Europe, 2003