Fully depleted back-illuminated p-channel CCD development

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5167, Issue , 2004, Pages 50-62

  Bebek, C J ^a   Bercovitz, J H ^a   Groom, D E ^a   Holland, S E ^a   Kadel, R W ^a   Karcher, A ^a   Kolbe, W F ^a   Oluseyi, H M ^a   Palaio, N P ^a   Prasad, V ^a   Turko, B T ^a   Wang, G ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Back illuminated; CCD; Fabrication; Fully depleted; Point spread function; Radiation damage

Indexed keywords

ELECTRIC CONDUCTIVITY; FABRICATION; IMAGING SYSTEMS; OPTICAL TRANSFER FUNCTION; PROTONS; RADIATION DAMAGE; SILICON; SPACE SURVEILLANCE;

BACK ILLUMINATED IMAGERS; FULLY DEPLETED IMAGERS;

CHARGE COUPLED DEVICES;

EID: 11144357393     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.506221     Document Type: Conference Paper

References (23)

1. S.E. Holland, D.E. Groom, N.P. Palaio, R.J. Stover, and M. Wei, "Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon," IEEE. Trans. Elec. Dev., 50, pp. 225-238, 2003.
2. J.P. Spratt, B.C. Passenheim, R.E. Leadon, "The effects of nuclear radiation on P-channel CCD imagers," in 1997 IEEE Radiation Effects Data Workshop, NSREC Snowmass 1997, Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference.
3. N.S. Saks, J.M. Killiany, P.R. Reid, and W.D. Baker, "A radiation hard MNOS CCD for low temperature applications," IEEE Trans. Nucl. Sci., 26, pp. 5074-5079, 1979.
4. W.C. Dash and R. Newman, "Intrinsic optical absorption in single-crystal germanium and silicon at 77K and 300K," Phys. Rev., 99, pp. 1151-1155, 1955.
5. D.E. Groom et al., "Quantum efficiency of a back-illuminated CCD imager: an optical approach," in Proc. SPIE, 3649, pp. 80-90, 1999.
6. S.E. Holland et al., "Development of back-illuminated, fully-depleted CCD image sensors for use in astronomy and astrophysics," presented at the 1997 IEEE Workshop on Charge-Coupled Devices and Advanced Image Sensors, Bruges, Belgium, 1997.
7. U.S. Patent 6,259,085 "Fully depleted back illuminated CCD," July 10th, 2001.
8. Personal communication, Debra Fischer, University of California-Berkeley Astronomy Department.
9. S.E. Holland et al., "A 200 × 200 CCD image sensor fabricated on high-resistivity silicon," in IEDM Technical Digest, pp. 911-914, 1996.
10. http://www.noao.edu/kpno/mars/
11. Sloan Digital Sky Survey, http://www.sdss.org.
12. Personal communication, Xiaohui Fan, University of Arizona Astronomy Department and Sloan Digital Sky Survey.
13. J.R. Janesick, Scientific charge-coupled devices, SPIE Press, Bellingham, WA, 2001.
14. J. Janesick, G. Soli, T. Elliot, and S. Collins, "The effects of proton damage on charge-coupled devices," in Proc. SPIE, 1447, pp. 87-108, 1991.
15. G.R. Hopkinson, "Proton damage effects on p-channel CCDs," IEEE Trans. Nucl. Sci., 46. pp. 1790-1796, 1999.
16. C.J. Bebek et al., "Proton radiation damage in p-channel CCDs fabricated on high-resistivity silicon," IEEE Trans. Nucl. Sci., 49, pp. 1221-1225, 2002.
17. C.J. Bebek et al., "Proton radiation damage in high-resistivity n-type silicon CCD's," in Proc. SPIE, 4669, pp. 161-171, 2002.
18. M. Moll, "Radiation damage in silicon particle detectors," Ph.D. dissertation, Physics Dept., Univ. of Hamburg, Germany, 1999.
19. M. Bruzzi, "Radiation damage in silicon detectors for high-energy physics experiments," IEEE Trans. Nucl. Sci., 48, pp. 960-971, 2001.
20. W. Shockley and W.T. Read. Jr. "Statistics of the recombinations of holes and electrons," Phys. Rev., 87, pp. 835-842, 1952.
21. http://www.dalsasemi.com, DALSA Semiconductor, Bromont, Quebec, Canada.
22. S.E. Holland, N.W. Wang, and W.W. Moses, "Development of low noise, back-side illuminated silicon photodiode arrays," IEEE Trans. Nucl. Sci., 44, pp. 443-447, 1997.
23. L.-Q. Chen, X. Zhang, T.-Y. Zhang, H.Y. Lin, and S. Lee, "Micro-Raman spectral analysis of the subsurface damage layer in machined silicon wafers," J. Mater. Res., 15, pp. 1441-1444, 2000.