A 200 x 200 CCD Image Sensor Fabricated On High-Resistivity Silicon

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 911-914

  Holland, S E ^a   Goldhaber, G ^a   Groom, D E ^a   Moses, W W ^a   Pennypacker, C R ^a   Perlmutter, S ^a   Wang, N W ^a   Stover, R J ^b   Wei, M ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b University of California Santa Cruz   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; IMAGE SENSORS; INFRARED DEVICES; SILICON; SUBSTRATES; ELECTRIC CONDUCTIVITY; INTEGRATED CIRCUIT MANUFACTURE; SEMICONDUCTING SILICON;

BACK-ILLUMINATED; CHARGE COUPLED DEVICE IMAGE SENSOR; FULLY DEPLETED; HIGH RESISTIVITY SILICON; INFRARED RESPONSE; NEAR INFRARED; NEAR-INFRARED; THINNINGS;

CHARGE COUPLED DEVICES;

BLUE RESPONSE; HIGH RESISTIVITY SILICON; INFRARED RESPONSE;

EID: 0030410535     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554127     Document Type: Conference Paper

References (13)

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