Ultrathin-wafer technology for a new 600 V-NPT-IGBT

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1997, Pages 361-364

  Laska, T ^a   Matschitsch, M ^a   Scholz, W ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COST EFFECTIVENESS; DEPOSITION; ELECTRIC LOSSES; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

BIPOLAR TRANSISTORS;

EID: 0030683093     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)